The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Dec. 13, 2017
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Young Jung Lee, Chungcheongnam-do, KR;
Jae-Woo Ryu, Chesterfield, MO (US);
Byung Chun Kim, Chungnam, KR;
Robert J. Falster, Woodstock, GB;
Soon Sung Park, Chungnam, KR;
Tae Hoon Kim, Chungnam, KR;
Jun Hwan Ji, Chungnam, KR;
Carissima Marie Hudson, St. Charles, MO (US);
SunEdison Semiconductor Limited (UEN201334164H), Singapore, SG;
Abstract
The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NHor N. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NHor Nto thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.