Tae Hoon Kim

Title: Innovations of Tae Hoon Kim in Silicon Wafer Treatment

Introduction

Tae Hoon Kim is a notable inventor based in Chungnam, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the treatment of silicon wafers. With a total of two patents to his name, his work focuses on enhancing the integrity and yield of silicon wafers.

Latest Patents

Tae Hoon Kim's latest patents include a method of treating silicon wafers to improve intrinsic gettering and gate oxide integrity yield. This method addresses the degradation of gate oxide integrity yield (GOI) that can occur after rapid thermal annealing in an atmosphere containing nitrogen gases. The invention involves stripping the silicon nitride layer, followed by wafer oxidation and the subsequent removal of the silicon oxide layer. This innovative approach aims to restore the GOI yield by mitigating the effects of crystal defects and vacancies generated during the process.

Career Highlights

Tae Hoon Kim is currently associated with SunEdison Semiconductor Limited, where he applies his expertise in semiconductor manufacturing. His work has been instrumental in advancing the technology used in silicon wafer treatment, contributing to improved performance in various applications.

Collaborations

Some of his notable coworkers include Young Jung Lee and Jae-Woo Ryu, who have collaborated with him on various projects within the semiconductor industry.

Conclusion

Tae Hoon Kim's innovative methods in silicon wafer treatment demonstrate his commitment to enhancing semiconductor technology. His contributions are vital for improving the efficiency and reliability of silicon wafers in modern electronics.