Jun Hwan Ji

Title: Innovations by Jun Hwan Ji in Silicon Wafer Treatment

Introduction

Jun Hwan Ji is a notable inventor based in Chungnam, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the treatment of silicon wafers. With a total of two patents to his name, his work focuses on enhancing the integrity and yield of silicon wafers used in various electronic applications.

Latest Patents

Jun Hwan Ji's latest patents include a method of treating silicon wafers to achieve intrinsic gettering and improve gate oxide integrity yield. This innovative method addresses the degradation of gate oxide integrity yield that can occur after rapid thermal annealing in an atmosphere containing nitrogen gases, such as NH3 or N2. The process involves stripping the silicon nitride layer, followed by wafer oxidation and the subsequent removal of the silicon oxide layer. This approach effectively restores the gate oxide integrity yield by mitigating the effects of crystal defects and vacancies generated during the annealing process.

Career Highlights

Jun Hwan Ji is currently employed at SunEdison Semiconductor Limited, where he continues to develop and refine his innovative techniques in semiconductor manufacturing. His expertise in silicon wafer treatment has positioned him as a valuable asset in the industry, contributing to advancements in semiconductor technology.

Collaborations

He has collaborated with notable colleagues, including Young Jung Lee and Jae-Woo Ryu, to further enhance the research and development efforts within his field. Their combined expertise fosters a collaborative environment that drives innovation in semiconductor processes.

Conclusion

Jun Hwan Ji's contributions to the treatment of silicon wafers exemplify the importance of innovation in the semiconductor industry. His patents reflect a commitment to improving the quality and performance of silicon wafers, which are crucial for modern electronic devices.