The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Sep. 10, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Soubir Basak, Chandler, AZ (US);
Igor Peidous, Eaton, OH (US);
Carissima Marie Hudson, St. Charles, MO (US);
HyungMin Lee, ChungNam, KR;
ByungChun Kim, ChungNam, KR;
Robert J. Falster, London, GB;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 15/00 (2006.01); C30B 15/10 (2006.01); C30B 15/30 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 15/007 (2013.01); C30B 15/10 (2013.01); C30B 15/305 (2013.01); H01L 21/02005 (2013.01); H01L 21/02123 (2013.01); H01L 21/28167 (2013.01);
Abstract
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×10atoms/cmand/or germanium at a concentration of at least about 1×10atoms/cm, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.