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For the Inventor, By the Inventor

St. Charles, MO, United States of America

Joseph C Holzer

USPTO Granted Patents = 24

 

Average Co-Inventor Count = 4.1

ph-index = 8

Forward Citations = 160(Granted Patents)


Location History:

  • Manchester, MO (US) (1996 - 1998)
  • St. Charles, MO (US) (1999 - 2009)
  • St. Peters, MO (US) (2013 - 2019)

Company Filing History:

goldMedal23 out of 347 
 
Memc Electronic Materials, Inc.
 patents
silverMedal1 out of 28 
 
Corner Star Limited
 patents

Years Active: 1996-2019

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24 patents (USPTO):Explore Patents
1. 10337118 - Apparatus and method for doping a semiconductor melt comprising a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck between a first and second end of the apparatus (2019-07-02),
2. 8398765 - Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation (2013-03-19),
3. 7573587 - Method and device for continuously measuring silicon island elevation (2009-08-11),
4. 7442253 - Process for forming low defect density, ideal oxygen precipitating silicon (2008-10-28),
5. 7229693 - Low defect density, ideal oxygen precipitating silicon (2007-06-12),
6. 7097718 - Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects (2006-08-29),
7. 6896728 - Process for producing low defect density, ideal oxygen precipitating silicon (2005-05-24),
8. 6840997 - Vacancy, dominsated, defect-free silicon (2005-01-11),
9. 6635587 - Method for producing czochralski silicon free of agglomerated self-interstitial defects (2003-10-21),
10. 6632278 - Low defect density epitaxial wafer and a process for the preparation thereof (2003-10-14),
11. 6605150 - Low defect density regions of self-interstitial dominated silicon (2003-08-12),
12. 6565649 - Epitaxial wafer substantially free of grown-in defects (2003-05-20),
13. 6555194 - Process for producing low defect density, ideal oxygen precipitating silicon (2003-04-29),
14. 6409827 - Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface (2002-06-25),
15. 6409826 - Low defect density, self-interstitial dominated silicon (2002-06-25),

Title: Joseph C Holzer: Innovator in Semiconductor Technologies

Introduction

Joseph C Holzer is a prominent inventor based in St. Charles, MO, known for his significant contributions to semiconductor technology with a total of 24 patents to his name. His work primarily focuses on methods and apparatuses that enhance the efficiency and precision of semiconductor manufacturing processes.

Latest Patents

Among Joseph Holzer's latest innovations is an apparatus and method for doping a semiconductor melt. This invention comprises a seed chuck, a seed crystal connected to the seed chuck, and a dopant container. The design allows for the dispensing of liquid dopant into the melt when positioned near it, facilitating effective control over the doping process essential for high-performance semiconductor materials. Additionally, he has developed a system that utilizes an unbalanced magnetic field in conjunction with iso-rotation to control the melt-solid interface shape during the growth of silicon crystals. This innovative method improves the quality and structural integrity of monocrystalline ingots produced via the Czochralski process.

Career Highlights

Throughout his career, Joseph Holzer has made significant strides in the field of semiconductor manufacturing. He has worked with leading companies such as MEMC Electronic Materials, Inc. and Corner Star Limited, where he has played a key role in advancing technologies that support efficient crystal growth and doping processes.

Collaborations

Joseph has collaborated with several esteemed colleagues in his field, including Steve A Markgraf and Paolo Mutti. Their combined expertise has led to breakthroughs and improved methodologies within semiconductor technology, further promoting innovation and efficiency in the industry.

Conclusion

Joseph C Holzer exemplifies the spirit of innovation in the semiconductor sector through his numerous patents and collaborative efforts with industry professionals. His contributions have not only advanced technological capabilities in doping and crystal growth but also continue to influence the future of semiconductor manufacturing.

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