The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
May. 20, 2003
Luciano Mule'stagno, St. Louis, MO (US);
LU Fei, St. Louis, MO (US);
Joseph C. Holzer, St. Charles, MO (US);
Harold W. Korb, Town & Country, MO (US);
Robert J. Falster, London, GB;
Luciano Mule'Stagno, St. Louis, MO (US);
Lu Fei, St. Louis, MO (US);
Joseph C. Holzer, St. Charles, MO (US);
Harold W. Korb, Town & Country, MO (US);
Robert J. Falster, London, GB;
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited.