The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jun. 29, 2009
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Milind Kulkarni, St. Louis, MO (US);
Richard G. Schrenker, Chesterfield, MO (US);
Joseph C. Holzer, St. Peters, MO (US);
Harold W. Korb, Chesterfield, MO (US);
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Milind Kulkarni, St. Louis, MO (US);
Richard G. Schrenker, Chesterfield, MO (US);
Joseph C. Holzer, St. Peters, MO (US);
Harold W. Korb, Chesterfield, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.