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For the Inventor, By the Inventor

St. Louis, MO, United States of America

Milind S Kulkarni

This inventor holds 14 USPTO granted patents and 2 published patent applications and 3 EPO patents, primarily in Silicon Crystal Growth. Top assignees: Memc Electronic Materials, Inc., Plasmasil, LLC, Sunedison, Inc.. Active years: 2001-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Milind S Kulkarni. Retrieved from https://idiyas.com/inventor/milind-s-kulkarni

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 78.6

 

Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 87(Granted Patents)


Company Filing History:

goldMedal12 out of 347 
 
Memc Electronic Materials, Inc.
 patents
silverMedal1 out of 3 
 
Plasmasil, LLC
 patents
bronzeMedal1 out of 37 
 
Sunedison, Inc.
 patents

Years Active: 2001-2014

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Areas of Expertise:
Fluidized Bed Reactor
Silicon Melt
Point Defects
Magnetic Field
Crystal Puller
Monocrystalline Ingot
Ingot Slicing
Silicon Wafers
Arsenic Doping
Nucleation Centers
Czochralski Method
Wafer Production
14 patents (USPTO):Explore Patents
1. 8906313 - Fluidized bed reactor systems (2014-12-09),
2. 8728574 - Methods for introducing a first gas and a second gas into a reaction chamber (2014-05-20),
3. 8673248 - Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface (2014-03-18),
4. 8551247 - Generating a pumping force in a silicon melt by applying a time-varying magnetic field (2013-10-08),
5. 8404206 - Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls (2013-03-26),
6. 8398765 - Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation (2013-03-19),
7. 8216362 - Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth (2012-07-10),
8. 8147613 - Crystal puller and method for growing a monocrystalline ingot (2012-04-03),
9. 7878883 - Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control (2011-02-01),
10. 7201800 - Process for making silicon wafers with stabilized oxygen precipitate nucleation centers (2007-04-10),
11. 7132091 - Single crystal silicon ingot having a high arsenic concentration (2006-11-07),
12. 6808781 - Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same (2004-10-26),
13. 6312517 - Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method (2001-11-06),
14. 6294469 - Silicon wafering process flow (2001-09-25),

Title: The Innovative Journey of Milind S Kulkarni

Introduction:

Milind S Kulkarni is a visionary inventor based in St. Louis, MO (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Milind S Kulkarni holds several patents in various technological domains, including artificial intelligence, renewable energy, and healthcare technologies.

Career Highlights:

With a career spanning over two decades, Milind S Kulkarni has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized industries.

Collaborations:

Throughout his career, Milind S Kulkarni has collaborated with top researchers, engineers, and scientists to bring his innovative ideas to life. His collaborative spirit has led to the successful implementation of numerous projects.

Conclusion:

Milind S Kulkarni's passion for innovation and his relentless drive to push the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire the next generation of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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