The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 06, 2009
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Milind Kulkarni, St. Louis, MO (US);
Harold W. Korb, Chesterfield, MO (US);
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Milind Kulkarni, St. Louis, MO (US);
Harold W. Korb, Chesterfield, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (I) and supplying a lower coil with a second direct current (I). The method also includes supplying the upper coil with a first alternating current (I) and supplying the lower coil with a second alternating current (I) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.