The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
May. 18, 2007
Applicant:
Milind S. Kulkarni, St. Louis, MO (US);
Inventor:
Milind S. Kulkarni, St. Louis, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
Processes for preparing a single crystal silicon ingot are disclosed. In certain embodiments, the processes involve controlling (1) a growth velocity, v, of the ingot as well as (2) an average axial temperature gradient, G, a corrected average axial temperature gradient, G, or an effective average axial temperature gradient, G, during the growth of at least a segment of the constant diameter portion of the ingot.
Kulkarni, Milind. (2012). Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth (U.S. Patent No. 8216362). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8216362
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile