The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 17, 2011
Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls
Milind S. Kulkarni, St. Louis, MO (US);
Puneet Gupta, Houston, TX (US);
Balaji Devulapalli, Chesterfield, MO (US);
Jameel Ibrahim, Humble, TX (US);
Vithal Revankar, Seabrook, TX (US);
Kwasi Foli, Columbia, MD (US);
Milind S. Kulkarni, St. Louis, MO (US);
Puneet Gupta, Houston, TX (US);
Balaji Devulapalli, Chesterfield, MO (US);
Jameel Ibrahim, Humble, TX (US);
Vithal Revankar, Seabrook, TX (US);
Kwasi Foli, Columbia, MD (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.