The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Sep. 27, 2002
Applicants:
Milind Kulkarni, St. Louis, MO (US);
Mohsen Banan, Grover, MO (US);
Christopher V. Luers, O'Fallon, MO (US);
Inventors:
Milind Kulkarni, St. Louis, MO (US);
Mohsen Banan, Grover, MO (US);
Christopher V. Luers, O'Fallon, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/00 (2006.01); C30B 15/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm.
Kulkarni, Milind. (2006). Single crystal silicon ingot having a high arsenic concentration (U.S. Patent No. 7132091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7132091
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile