logo

For the Inventor, By the Inventor

Grover, MO, United States of America

Mohsen Banan

This inventor holds 19 USPTO granted patents and 1 EPO patent. Top assignee: Memc Electronic Materials, Inc.. Active years: 1995-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mohsen Banan. Retrieved from https://idiyas.com/inventor/mohsen-banan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 68.4

 

Average Co-Inventor Count = 3.0

ph-index = 9

Forward Citations = 155(Granted Patents)


Location History:

  • St. Louis, MO (US) (1995 - 1998)
  • Court Grover, MO (US) (2003)
  • Grover, MO (US) (2001 - 2008)

Company Filing History:

goldMedal19 out of 347 
 
Memc Electronic Materials, Inc.
 patents

Years Active: 1995-2008

Loading Chart...
Loading Chart...
19 patents (USPTO):Explore Patents
1. 7404856 - Nitrogen-doped silicon substantially free of oxidation induced stacking faults (2008-07-29),
2. 7217320 - Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults (2007-05-15),
3. 7201800 - Process for making silicon wafers with stabilized oxygen precipitate nucleation centers (2007-04-10),
4. 7182809 - Nitrogen-doped silicon substantially free of oxidation induced stacking faults (2007-02-27),
5. 7132091 - Single crystal silicon ingot having a high arsenic concentration (2006-11-07),
6. 7105050 - Method for the production of low defect density silicon (2006-09-12),
7. 6866713 - Seed crystals for pulling single crystal silicon (2005-03-15),
8. 6858307 - Method for the production of low defect density silicon (2005-02-22),
9. 6846539 - Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults (2005-01-25),
10. 6808781 - Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same (2004-10-26),
11. 6663709 - Crystal puller and method for growing monocrystalline silicon ingots (2003-12-16),
12. 6579362 - Heat shield assembly for crystal puller (2003-06-17),
13. 6554898 - Crystal puller for growing monocrystalline silicon ingots (2003-04-29),
14. 6454851 - Method for preparing molten silicon melt from polycrystalline silicon charge (2002-09-24),
15. 6312517 - Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method (2001-11-06),

Title: Mohsen Banan - Pioneering Inventor from Grover, MO

Introduction: Mohsen Banan is a distinguished inventor hailing from Grover, Missouri. His innovative spirit and dedication to technological advancement have made him a prominent figure in the world of patents and inventions.

Latest Patents: Mohsen Banan holds several groundbreaking patents in various fields, including telecommunications, software development, and medical devices. His recent patents showcase his commitment to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, Mohsen Banan has worked tirelessly to bring his ideas to life. His contributions to the field of technology have earned him recognition as a visionary inventor with a keen eye for solving complex problems.

Collaborations: Throughout his career, Mohsen Banan has collaborated with leading industry experts, research institutions, and universities to further his research and development efforts. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several innovative projects.

Conclusion: Mohsen Banan's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…