The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Jan. 15, 2007
Applicants:
Hiroyo Haga, Utsunomiya, JP;
Takaaki Aoshima, Utsunomiya, JP;
Mohsen Banan, Grover, MO (US);
Inventors:
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.