The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Oct. 12, 2004
Luciano Mule'stagno, St. Louis, MO (US);
Jeffrey L. Libbert, O'Fallon, MO (US);
Richard J. Phillips, St. Peters, MO (US);
Milind Kulkarni, St. Louis, MO (US);
Mohsen Banan, Grover, MO (US);
Stephen J. Brunkhorst, Chesterfield, MO (US);
Luciano Mule'Stagno, St. Louis, MO (US);
Jeffrey L. Libbert, O'Fallon, MO (US);
Richard J. Phillips, St. Peters, MO (US);
Milind Kulkarni, St. Louis, MO (US);
Mohsen Banan, Grover, MO (US);
Stephen J. Brunkhorst, Chesterfield, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.