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For the Inventor, By the Inventor

Chesterfield, MO, United States of America

Stephen J Brunkhorst

This inventor holds 2 USPTO granted patents. Top assignee: Memc Electronic Materials, Inc.. Active years: 2004-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stephen J Brunkhorst. Retrieved from https://idiyas.com/inventor/stephen-j-brunkhorst

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2

% Patents Active = 50.0

Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 24(Granted Patents)


Company Filing History:

goldMedal2 out of 347 
 
Memc Electronic Materials, Inc.
 patents

Years Active: 2004-2007

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2 patents (USPTO):Explore Patents
1. 7201800 - Process for making silicon wafers with stabilized oxygen precipitate nucleation centers (2007-04-10),
2. 6808781 - Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same (2004-10-26),

Title: The Inventor Stephen J Brunkhorst

Introduction: Stephen J Brunkhorst is a renowned inventor based in Chesterfield, Missouri, known for his groundbreaking contributions to various industries.

Latest Patents: Stephen J Brunkhorst holds several patents in the fields of technology and engineering, with his most recent inventions focusing on sustainable energy solutions and advanced robotics.

Career Highlights: Throughout his career, Stephen J Brunkhorst has been recognized for his innovative thinking and problem-solving skills, leading to the development of cutting-edge technologies that have revolutionized the way we live and work.

Collaborations: Stephen J Brunkhorst has collaborated with leading research institutions, universities, and companies to bring his inventions to life, fostering a culture of creativity and collaboration in the industry.

Conclusion: Stephen J Brunkhorst's passion for innovation and dedication to pushing the boundaries of what is possible make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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