The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
May. 18, 2007
Applicant:
Milind S. Kulkarni, St. Louis, MO (US);
Inventor:
Milind S. Kulkarni, St. Louis, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 15/00 (2006.01); C30B 15/14 (2006.01);
U.S. Cl.
CPC ...
C30B 15/00 (2013.01); C30B 15/14 (2013.01); C30B 15/20 (2013.01); C30B 15/203 (2013.01); C30B 15/206 (2013.01);
Abstract
The present invention relates to a single crystal silicon ingot or wafer wherein the lateral incorporation effect of intrinsic point defects has been manipulated such that the formation of agglomerated intrinsic point defects and/or oxygen precipitate clusters in a ring extending radially inward from about the lateral surface of the ingot segment is limited.