The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Aug. 25, 2008
Zheng LU, O'Fallon, MO (US);
Steven L. Kimbel, St. Charles, MO (US);
Robert H. Fuerhoff, St. Charles, MO (US);
Joseph C. Holzer, St. Charles, MO (US);
Zheng Lu, O'Fallon, MO (US);
Steven L. Kimbel, St. Charles, MO (US);
Robert H. Fuerhoff, St. Charles, MO (US);
Joseph C. Holzer, St. Charles, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.