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For the Inventor, By the Inventor

St. Charles, MO, United States of America

Zheng Lu

This inventor holds 16 USPTO granted patents and 8 published patent applications and 3 EPO patents. Top assignees: Globalwafers Co., Ltd., Memc Electronic Materials, Inc.. Active years: 2003-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zheng Lu. Retrieved from https://idiyas.com/inventor/zheng-lu-y08p71te

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 93.8

 

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 30(Granted Patents)


Location History:

  • St. Charles, MO (US) (2003 - 2009)
  • O'Fallon, MO (US) (2009 - 2024)

Company Filing History:

goldMedal9 out of 315 
 
Globalwafers Co., Ltd.
 patents
silverMedal7 out of 347 
 
Memc Electronic Materials, Inc.
 patents

Years Active: 2003-2025

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16 patents (USPTO):Explore Patents
1. 12428750 - Ingot puller apparatus having silicon feed tubes with kick plates (2025-09-30),
2. 12398487 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2025-08-26),
3. 12227874 - Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy (2025-02-18),
4. 12152314 - Methods for determining suitability of silicon substrates for epitaxy (2024-11-26),
5. 12018400 - Methods and systems of capturing transient thermal responses of regions of crystal pullers (2024-06-25),
6. 11959189 - Process for preparing ingot having reduced distortion at late body length (2024-04-16),
7. 11753741 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2023-09-12),
8. 11111602 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2021-09-07),
9. 10988859 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2021-04-27),
10. 7611580 - Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field (2009-11-03),
11. 7573587 - Method and device for continuously measuring silicon island elevation (2009-08-11),
12. 7223304 - Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field (2007-05-29),
13. 7125450 - Process for preparing single crystal silicon using crucible rotation to control temperature gradient (2006-10-24),
14. 6960254 - Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature (2005-11-01),
15. 6663709 - Crystal puller and method for growing monocrystalline silicon ingots (2003-12-16),

Title: Innovations and Contributions of Inventor Zheng Lu

Introduction

Zheng Lu is a prominent inventor based in St. Charles, MO, with a remarkable portfolio of 16 patents. His work primarily focuses on advancements in silicon technology, which have significant implications in the semiconductor industry.

Latest Patents

Among his latest innovations is the "Ingot puller apparatus having silicon feed tubes with kick plates." This invention includes a silicon feed tube designed for adding solid silicon to a crucible assembly. The feed tubes feature a conduit portion with an inner diameter and a kick plate that extends across at least 60% of this diameter. Another notable patent is for "Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size." This invention provides nitrogen-doped CZ silicon crystal ingots and wafers that exhibit a uniform distribution of oxygen precipitate density and size, effectively eliminating significant edge effects. The methods for producing these ingots involve controlling the pull rate from molten silicon, the temperature gradient, and nitrogen concentration.

Career Highlights

Zheng Lu has made significant contributions to the field while working with leading companies such as GlobalWafers Co., Ltd. and MEMC Electronic Materials, Inc. His expertise in silicon technology has positioned him as a key player in the development of advanced materials for the semiconductor industry.

Collaborations

Throughout his career, Zheng has collaborated with notable professionals, including Feng-Chien Tsai and Gaurab Samanta. These collaborations have further enhanced his innovative capabilities and contributed to the success of his projects.

Conclusion

Zheng Lu's contributions to silicon technology through his patents and collaborations highlight his importance as an inventor in the semiconductor field. His work continues to influence advancements in materials science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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