The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Oct. 31, 2003
Process for preparing single crystal silicon using crucible rotation to control temperature gradient
Applicants:
Zheng LU, St. Charles, MO (US);
Steven L. Kimbel, St. Charles, MO (US);
Ying Tao, St. Peters, MO (US);
Inventors:
Zheng Lu, St. Charles, MO (US);
Steven L. Kimbel, St. Charles, MO (US);
Ying Tao, St. Peters, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G, as a function of radius (i.e., G(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.