The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Jun. 07, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); C30B 33/02 (2006.01); G01N 21/21 (2006.01); G01N 21/84 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 22/12 (2013.01); G01N 2021/217 (2013.01); G01N 2021/8461 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02634 (2013.01); H01L 21/02664 (2013.01);
Abstract
Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.