The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Jun. 07, 2022
Globalwafers Co., Ltd., Hsinchu, TW;
Zheng Lu, O'Fallon, MO (US);
Shan-Hui Lin, Hsinchu, TW;
Chun-Chin Tu, Zhubei, TW;
Chi-Yung Chen, New Teipei, TW;
Feng-Chien Tsai, Zhubei, TW;
Hong-Huei Huang, Shuishang Township, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.