The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Apr. 03, 2020
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Tapas Jain, Hsinchu, TW;
Sumeet S. Bhagavat, St. Charles, MO (US);
Zheng Lu, O'Fallon, MO (US);
Feng-Chien Tsai, Taipei, TW;
Hong-Huei Huang, Shuishang Township, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/22 (2006.01); C30B 15/14 (2006.01); C30B 15/20 (2006.01); C30B 30/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/22 (2013.01); C30B 15/14 (2013.01); C30B 15/203 (2013.01); C30B 30/04 (2013.01);
Abstract
A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.