The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Feb. 15, 2022
Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Zheng Lu, O'Fallon, MO (US);

Chi-Yung Chen, New Taipei, TW;

Hsien-Ta Tseng, Toufen, TW;

Sumeet S. Bhagavat, St. Charles, MO (US);

Vahid Khalajzadeh, St. Charles, MO (US);

Assignee:

GlobalWafers Co., Ltd., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 15/10 (2013.01); C30B 15/14 (2013.01);
Abstract

A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.


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