The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Sep. 01, 2011
John P. Deluca, Chesterfield, MO (US);
Frank S. Delk, Ii, Henrica, VA (US);
Bayard K. Johnson, Jefferson Hills, PA (US);
William L. Luter, St. Charles, MO (US);
Neil D. Middendorf, St. Louis, MO (US);
Dick S. Williams, St. Charles, MO (US);
Nels Patrick Ostrom, Worden, IL (US);
James N. Highfill, St. Paul, MO (US);
John P. DeLuca, Chesterfield, MO (US);
Frank S. Delk, II, Henrica, VA (US);
Bayard K. Johnson, Jefferson Hills, PA (US);
William L. Luter, St. Charles, MO (US);
Neil D. Middendorf, St. Louis, MO (US);
Dick S. Williams, St. Charles, MO (US);
Nels Patrick Ostrom, Worden, IL (US);
James N. Highfill, St. Paul, MO (US);
GTAT IP HOLDING, Merrimack, NH (US);
Abstract
A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.