This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Gtat IP Holding LLC.. Active years: 2015.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2015
Title: The Innovative Contributions of James N. Highfill
Introduction
James N. Highfill is an innovative inventor based in St. Paul, Missouri, known for his significant contributions to the field of semiconductor technology. With a remarkable patent to his name, he has made strides in improving the quality and efficiency of silicon crystals.
Latest Patents
Highfill holds a patent for a groundbreaking invention titled "Silicon single crystal doped with gallium, indium, or aluminum." This patent describes a doped silicon single crystal characterized by resistivity variation along a longitudinal and/or radial axis of less than 10%. The method outlined in the patent involves several key steps, including providing a melt material consisting of silicon, introducing a dopant such as gallium, indium, or aluminum, and growing a doped silicon single crystal from a seed crystal. This innovative approach allows for precise control over the dopant levels, enhancing the performance of the silicon crystals.
Career Highlights
James N. Highfill has established himself as an expert in semiconductor materials during his tenure at GTAT IP Holding LLC. His dedication to research and development has led to advancements in the efficiency of silicon crystal growth processes. His work significantly contributes to the industries relying on high-quality silicon materials.
Collaborations
Throughout his career, Highfill has collaborated with notable colleagues, including John P. Deluca and Frank S. Delk, II. Their combined expertise in the field strengthens the development of innovative technologies and enhances the potential applications of their work in various industries.
Conclusion
James N. Highfill continues to be a compelling figure in the realm of semiconductor innovation. With his patented processes and collaborative efforts, he is making strides that could shape the future of silicon crystal applications. His contributions are invaluable to both the scientific community and the technological advancements across industries.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile