Frank S Delk, Ii

Title: Frank S. Delk, II: Innovator in Silicon Crystal Technology

Introduction

Frank S. Delk, II is a notable inventor based in Henrico, Virginia. He has made significant contributions to the field of semiconductor technology, particularly in the development of doped silicon single crystals. His innovative work has led to advancements that are crucial for various applications in electronics.

Latest Patents

Delk holds a patent for a "Silicon single crystal doped with gallium, indium, or aluminum." This patent describes a doped silicon single crystal that exhibits a resistivity variation of less than 10% along a longitudinal and/or radial axis. The method for preparing these doped silicon crystals involves providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus. The process includes delivering a dopant, such as gallium, indium, or aluminum, to the melt material, introducing a seed crystal into the molten material, and growing the doped silicon single crystal by withdrawing the seed crystal. The patent also outlines a doping model for calculating the amount of dopant to be delivered during the growth process.

Career Highlights

Frank S. Delk, II is associated with GTAT IP Holding LLC, where he continues to work on innovative technologies in the semiconductor industry. His expertise in crystal growth and doping processes has positioned him as a valuable asset in his field.

Collaborations

Delk has collaborated with notable colleagues, including John P. Deluca and Bayard K. Johnson. These partnerships have contributed to the advancement of technology in their respective areas of expertise.

Conclusion

Frank S. Delk, II is a distinguished inventor whose work in silicon crystal technology has paved the way for advancements in the semiconductor industry. His contributions continue to influence the field and inspire future innovations.