Company Filing History:
Years Active: 2015
Title: Nels Patrick Ostrom: Innovator in Silicon Crystal Technology
Introduction
Nels Patrick Ostrom is a notable inventor based in Worden, Illinois, recognized for his contributions to the field of semiconductor technology. He holds a patent that showcases his innovative approach to creating doped silicon single crystals, which are essential in various electronic applications.
Latest Patents
Ostrom's most recent patent is titled "Silicon single crystal doped with gallium, indium, or aluminum." This invention describes a doped silicon single crystal that exhibits a resistivity variation of less than 10% along both longitudinal and radial axes. The patent outlines a method for preparing these doped silicon crystals, which involves using a continuous Czochralski crystal growth apparatus. The process includes providing a melt material comprising silicon, delivering a dopant such as gallium, indium, or aluminum, and growing the doped silicon single crystal by withdrawing a seed crystal from the molten material. The patent also discusses a doping model for calculating the amount of dopant to be delivered during the growth process.
Career Highlights
Ostrom is associated with GTAT IP Holding LLC, where he applies his expertise in semiconductor technology. His work has significantly contributed to advancements in the production of high-quality silicon crystals, which are crucial for the electronics industry.
Collaborations
Throughout his career, Ostrom has collaborated with notable colleagues, including John P. Deluca and Frank S. Delk, II. These collaborations have likely enhanced the development and refinement of his innovative technologies.
Conclusion
Nels Patrick Ostrom's work in the field of silicon crystal technology exemplifies the impact of innovation on the electronics industry. His patented methods and collaborations highlight his commitment to advancing semiconductor technology.