The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Nov. 22, 2016
Applicant:
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Inventors:
Mauro Diodà, Bolzano, IT;
Marco D'Angella, Merano, IT;
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Assignee:
GlobalWafers Co., Ltd., Taiwan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C30B 15/00 (2013.01); C23C 16/4411 (2013.01); C30B 25/14 (2013.01); C30B 29/06 (2013.01); C30B 35/00 (2013.01); Y10T 117/1032 (2015.01);
Abstract
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a housing defining a growth chamber, a crucible disposed within the growth chamber containing the melt of semiconductor or solar-grade material, a vacuum pump for drawing exhaust gases out of the growth chamber, and a fluid-cooled exhaust tube connected between the growth chamber and the vacuum pump.