The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
May. 22, 2014
Sunedison Semiconductor Limited, Singapore, SG;
Soubir Basak, Chandler, AZ (US);
Carissima Marie Hudson, St. Charles, MO (US);
Gaurab Samanta, St. Peters, MO (US);
Jae-Woo Ryu, Chesterfield, MO (US);
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Kirk D. McCallum, Wentzville, MO (US);
HyungMin Lee, Cheonan, SK;
SunEdison Semiconductor Limited, St. Peters, MO (US);
Abstract
An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.