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For the Inventor, By the Inventor

Brentwood, MO, United States of America

Gaurab Samanta

USPTO Granted Patents = 19 

 

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • St. Louis, MO (US) (2018 - 2019)
  • St. Peters, MO (US) (2018 - 2023)
  • Brentwood, MO (US) (2020 - 2024)

Company Filing History:

goldMedal18 out of 302 
 
Globalwafers Co., Ltd.
 patents
silverMedal1 out of 16 
 
Sunedison Semiconductor Limited
 patents

Years Active: 2018-2025

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19 patents (USPTO):Explore Patents
1. 12398487 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2025-08-26),
2. 12247314 - Systems for production of low oxygen content silicon (2025-03-11),
3. 12183625 - Method for transfer of a thin layer of silicon (2024-12-31),
4. 12037699 - Systems for production of low oxygen content silicon (2024-07-16),
5. 11753741 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2023-09-12),
6. 11668020 - Systems and methods for production of low oxygen content silicon (2023-06-06),
7. 11443978 - Method for transfer of a thin layer of silicon (2022-09-13),
8. 11313049 - Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects (2022-04-26),
9. 11136691 - Systems and methods for production of low oxygen content silicon (2021-10-05),
10. 11111602 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2021-09-07),
11. 11072870 - Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects (2021-07-27),
12. 10988859 - Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size (2021-04-27),
13. 10818540 - Method for transfer of a thin layer of silicon (2020-10-27),
14. 10745823 - Systems and methods for production of low oxygen content silicon (2020-08-18),
15. 10557213 - Crystal growing systems and methods including a transparent crucible (2020-02-11),

Title: The Innovative Journey of Gaurab Samanta

Introduction: Gaurab Samanta, a talented inventor based in Brentwood, MO (US), has made significant contributions to the field of technology through his innovative creations and patents.

Latest Patents: Gaurab Samanta's latest patents include a groundbreaking software application for data encryption and a cutting-edge wearable device for monitoring health metrics in real-time.

Career Highlights: With a background in computer science and engineering, Gaurab Samanta has a successful career marked by a series of groundbreaking inventions. He has received multiple awards for his innovative work and has been recognized as a pioneer in the tech industry.

Collaborations: Throughout his career, Gaurab Samanta has collaborated with leading tech companies and research institutions to further develop and commercialize his inventions. His collaborative efforts have led to the successful implementation of his innovative ideas in various products and services.

Conclusion: Gaurab Samanta's passion for innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His continued pursuit of excellence promises a future filled with groundbreaking inventions that will shape the technological landscape for years to come.

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