The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Oct. 19, 2016
Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Soubir Basak, Chandler, AZ (US);

Gaurab Samanta, Brentwood, MO (US);

Parthiv Daggolu, Creve Coeur, MO (US);

Benjamin Michael Meyer, Defiance, MO (US);

William L. Luter, St. Charles, MO (US);

Jae Woo Ryu, Chesterfield, MO (US);

Eric Michael Gitlin, St. Peters, MO (US);

Assignee:

GlobalWafers Co., Ltd., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 29/06 (2006.01); C30B 15/14 (2006.01);
U.S. Cl.
CPC ...
C30B 15/206 (2013.01); C30B 15/14 (2013.01); C30B 29/06 (2013.01); Y10T 117/10 (2015.01); Y10T 117/1068 (2015.01);
Abstract

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.


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