Globalwafers Co., Ltd.

Sunedison Semiconductor Limited

Gaurab Samanta

Soubir Basak

Parthiv Daggolu

Sumeet S Bhagavat

Nan Zhang

Zheng Lu

Feng-Chien Tsai

Tse-Wei Lu

William L Luter

Benjamin Michael Meyer

Salvador Zepeda

Richard Joseph Phillips

Carissima Marie Hudson

Hariprasad Sreedharamurthy

HyungMin Lee

Jae-Woo Ryu

Eric Michael Gitlin

Jae Woo Ryu

Kirk D McCallum

Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

Systems for production of low oxygen content silicon

A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.

Method for transfer of a thin layer of silicon

Systems and methods for production of low oxygen content silicon

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.

Crystal growing systems and methods including a transparent crucible

Growing community of inventors

Brentwood, MO, United States of America

Gaurab Samanta