The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Jun. 27, 2018
Global Wafers Co., Ltd., Hsinchu, TW;
Carissima Marie Hudson, St. Charles, MO (US);
JaeWoo Ryu, Chesterfield, MO (US);
Richard J. Phillips, St. Peters, MO (US);
Robert Standley, Chesterfield, MO (US);
HyungMin Lee, Cheonan-si, KR;
YoungJung Lee, Cheonan-si, KR;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.