The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Mar. 05, 2019
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Gang Wang, Grover, MO (US);
Michael R. Seacrist, Lake St. Louis, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/3205 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 21/762 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0243 (2013.01); H01L 21/7624 (2013.01); H01L 33/0075 (2013.01); H01L 21/76254 (2013.01); H01L 29/7786 (2013.01);
Abstract
A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates. The Group IIIA-nitride layers may be deposited on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. The Group IIIA-nitride layers may be deposited by heteroepitaxial deposition on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates.