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For the Inventor, By the Inventor

Grover, MO, United States of America

Gang Wang

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This inventor holds 39 USPTO granted patents and 2 published patent applications and 17 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: Globalwafers Co., Ltd., Imec Vzw, Katholieke Universiteit Leuven. Active years: 2013-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gang Wang. Retrieved from https://idiyas.com/inventor/gang-wang-ojgj5gmm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 39 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 48(Granted Patents)


Location History:

  • Leuven, BE (2013)
  • St. Peters, MO (US) (2015 - 2023)
  • Grover, MO (US) (2018 - 2024)

Company Filing History:

goldMedal35 out of 315 
 
Globalwafers Co., Ltd.
 patents
silverMedal2 out of 1,869 
 
Imec Vzw
 patents
bronzeMedal2 out of 632 
 
Katholieke Universiteit Leuven
 patents
4. 2 out of 38 
 
Sunedison Semiconductor Limited (uen201334164h)
 patents
5. 1 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2013-2024

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Areas of Expertise:
Semiconductor Structure
High Resistivity SOI Wafers
CVD Apparatus
Layer Transfer
Charge Trapping Efficiency
Silicon Germanium-on-Insulator
Epitaxial Reactor
Nanochannel Device
Group IIIA-Nitride Layers
Polycrystalline Silicon Films
Substrate Loss Reduction
Temperature Control
39 patents (USPTO):Explore Patents
1. 12009249 - Methods for etching a semiconductor structure and for conditioning a processing reactor (2024-06-11),
2. 11926892 - Methods for conditioning a processing reactor (2024-03-12),
3. 11699615 - High resistivity semiconductor-on-insulator wafer and a method of manufacture (2023-07-11),
4. 11598021 - CVD apparatus (2023-03-07),
5. 11594446 - High resistivity SOI wafers and a method of manufacturing thereof (2023-02-28),
6. 11515196 - Methods for etching a semiconductor structure and for conditioning a processing reactor (2022-11-29),
7. 11495487 - Methods for conditioning a processing reactor (2022-11-08),
8. 11239107 - High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency (2022-02-01),
9. 11173697 - Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate (2021-11-16),
10. 11145538 - High resistivity silicon-on-insulator structure and method of manufacture thereof (2021-10-12),
11. 11139198 - High resistivity semiconductor-on-insulator wafer and a method of manufacturing (2021-10-05),
12. 11081407 - Methods for assessing semiconductor structures (2021-08-03),
13. 11081386 - High resistivity SOI wafers and a method of manufacturing thereof (2021-08-03),
14. 10985049 - Manufacturing method of smoothing a semiconductor surface (2021-04-20),
15. 10910257 - High resistivity SOI wafers and a method of manufacturing thereof (2021-02-02),

Title: Inventor Gang Wang: Revolutionizing Technology in Grover, MO

Introduction: Gang Wang is a visionary inventor based in Grover, MO, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Gang Wang holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Gang Wang has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Gang Wang has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge-sharing to drive progress in the ever-evolving tech landscape.

Conclusion: Gang Wang's relentless pursuit of innovation and his passion for pushing the boundaries of what is possible make him a true pioneer in the world of technology, inspiring the next generation of inventors to dream big and create a better future for all.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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