The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Apr. 09, 2019
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Gang Wang, Grover, MO (US);
Charles Lottes, Ballwin, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/322 (2006.01); B32B 43/00 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
B32B 43/006 (2013.01); H01L 21/0201 (2013.01); H01L 21/02008 (2013.01); H01L 21/02236 (2013.01); H01L 21/02241 (2013.01); H01L 21/2654 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 21/3247 (2013.01); B32B 2457/14 (2013.01); H01L 21/02005 (2013.01); H01L 21/322 (2013.01); H01L 21/3221 (2013.01); H01L 21/76243 (2013.01); H01L 21/76254 (2013.01);
Abstract
A method is disclosed for promoting the formation of uniform platelets in a monocrystalline semiconductor donor substrate by irradiating the monocrystalline semiconductor donor substrate with light. The photon-absorption assisted platelet formation process leads to uniformly distributed platelets with minimum built-in stress that promote the formation a well-defined cleave-plane in the subsequent layer transfer process.