The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Aug. 08, 2018
Globalwafers Co., Ltd, Hsinchu, TW;
Igor Peidous, Eaton, OH (US);
Srikanth Kommu, St. Charles, MO (US);
Gang Wang, St. Peters, MO (US);
Shawn George Thomas, Chesterfield, MO (US);
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer comprises a polycrystalline, amorphous, nanocrystalline, or monocrystalline structure and comprises a material selected from the group consisting of SiGe, SiC, SiGeSn, SiGeSnC, GeSn, group IIIA-nitrides, semiconductor oxides, and any combination thereof.