The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Oct. 19, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventor:
Gang Wang, Grover, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); C23C 16/24 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68757 (2013.01); C23C 16/24 (2013.01); H01J 37/32477 (2013.01); H01J 37/32715 (2013.01); H01L 21/311 (2013.01); H01L 21/31116 (2013.01); H01L 21/68735 (2013.01);
Abstract
Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed. An engineered polycrystalline silicon surface layer is deposited on a susceptor which supports the semiconductor structure. The polycrystalline silicon surface layer may be engineered by controlling the temperature at which the layer is deposited, by grooving the polycrystalline silicon surface layer or by controlling the thickness of the polycrystalline silicon surface layer.