Hopewell Junction, NY, United States of America

Matthew S Angyal

This inventor holds 28 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Advanced Micro Devices Corporation, Freescale Semiconductor,inc.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matthew S Angyal. Retrieved from https://idiyas.com/inventor/matthew-s-angyal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 42.9

Average Co-Inventor Count = 5.1

ph-index = 7

Forward Citations = 153(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2012)
  • Stormville, NY (US) (2005 - 2023)

Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
MIM Capacitor
Electrostatic Guard Ring
Airgap Vias
Low-k Interconnects
Dual Damascene Structures
Through-Silicon Vias
Electromigration Behavior
Interconnect Variability
Back End of Line Processing
Deflection Analysis
Critical Dimension
Hybrid Dielectric
28 patents (USPTO):Explore Patents

Title: Matthew S Angyal: Innovating in Semiconductors

Introduction:

Matthew S Angyal, a prolific inventor based in Hopewell Junction, NY, has made significant contributions to the field of semiconductors with 24 patents to his name. His innovative approach to circuit design and electrical interconnect structures has earned him recognition in the industry.

Latest Patents:

1. **Latch-up avoidance for sea-of-gates**: Angyal's invention focuses on implementing a CMOS circuit design using a sea-of-gates fill methodology to prevent latch-up. By disconnecting vias from power rails and moving them to disconnected nodes, the innovation maintains density while preventing latch-up effectively.

2. **Airgap vias in electrical interconnects**: Angyal's interconnect structures with airgap vias reduce TDDB susceptibility and stray capacitance. By utilizing dielectric material to separate and connect upper and lower layers of interconnects, the invention enhances the reliability and performance of electrical pathways.

Career Highlights:

Matthew S Angyal has lent his expertise to renowned companies such as IBM (International Business Machines Corporation) and Advanced Micro Devices Corporation. His tenure at these leading tech firms has been marked by his groundbreaking research and patentable innovations in semiconductor technologies.

Collaborations:

Throughout his career, Angyal has collaborated with industry experts such as Habib Hichri and Naftali Eliahu Lustig. These collaborations have fostered a culture of innovation, leading to the development of cutting-edge solutions in the semiconductor space.

Conclusion:

Matthew S Angyal's remarkable journey as an inventor in the semiconductor industry is defined by his inventive spirit and commitment to pushing the boundaries of technology. With a diverse portfolio of patents and a history of successful collaborations, Angyal continues to make a profound impact on the field, shaping the future of semiconductor innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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