The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jun. 28, 2011
Matthew S. Angyal, Stormville, NY (US);
Oluwafemi O. Ogunsola, Hopewell Junction, NY (US);
Hakeem B. Akinmade-yusuff, Beacon, NY (US);
Matthew S. Angyal, Stormville, NY (US);
Oluwafemi O. Ogunsola, Hopewell Junction, NY (US);
Hakeem B. Akinmade-Yusuff, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method including forming an organic polymer layer (OPL) on a substrate; forming a patterned photoresist layer having a first opening and a second opening over the OPL, the second opening wider than the first opening; performing a first reactive ion etch (RIE) to form a first trench and a second trench in the organic layer, the second trench wider than the first trench, the first trench extending into but not through the organic polymer layer, the second trench extending through the OPL to the substrate, the first RIE forming a first polymer layer on sidewalls of the first trench and a second polymer layer on sidewalls of the second trench, the second polymer layer thicker than the first polymer layer; and performing a second RIE to extend the first trench through the OPL to the substrate, the second RIE removing the second polymer layer from sidewalls of the second trench.