The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jul. 25, 2013
International Business Machines Corporation, Armonk, NY (US);
Matthew S. Angyal, Stormville, NY (US);
Yannick S. Loquet, Cohoes, NY (US);
Yann A. Mignot, Slingerlands, NY (US);
Son V. Nguyen, Schenectady, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Hosadurga Shobha, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method for fabricating an improved SiCOH hardmask with graded transition layers having an improved profile for forming sub-20 nm back end of the line (BEOL) metallized interconnects are provided. In one embodiment, the improved hardmask may be comprised of five layers: an oxide adhesion layer, a graded transition layer, a dielectric layer, an inverse graded transition layer, and an oxide layer. In another embodiment, the improved hardmask may be comprised of four layers; an oxide adhesion layer, a graded transition layer, a dielectric layer, and an oxide layer. In another embodiment, a method of forming an improved hardmask may comprise a continuous five step plasma enhanced chemical vapor deposition (PECVD) process utilizing a silicon precursor, a porogen, and oxygen. In yet another embodiment, a method of forming an improved hardmask may comprise a continuous four step PECVD process utilizing a silicon precursor, a porogen, and oxygen.