The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 30, 2010
Ravi Prakash Srivastava, Fishkill, NY (US);
Oluwafemi. O. Ogunsola, Hopewell Junction, NY (US);
Craig Child, Hopewell Junction, NY (US);
Muhammed Shafi Kurikka Valappil Pallachalil, Wappingers Falls, NY (US);
Habib Hichri, Poughkeepsie, NY (US);
Matthew Angyal, Stormville, NY (US);
Hideshi Miyajima, Clifton Park, NY (US);
Ravi Prakash Srivastava, Fishkill, NY (US);
Oluwafemi. O. Ogunsola, Hopewell Junction, NY (US);
Craig Child, Hopewell Junction, NY (US);
Muhammed Shafi Kurikka Valappil Pallachalil, Wappingers Falls, NY (US);
Habib Hichri, Poughkeepsie, NY (US);
Matthew Angyal, Stormville, NY (US);
Hideshi Miyajima, Clifton Park, NY (US);
Abstract
A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.