The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Aug. 25, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Atsushi Ogino, Fishkill, NY (US);

Baozhen Li, South Burlington, VT (US);

Dureseti Chidambarrao, Weston, CT (US);

Matthew Stephen Angyal, Stormville, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H10W 20/496 (2026.01);
Abstract

A MIM capacitor including a bottom metal layer on a substrate, a first contact window in the bottom metal layer; and a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, where the first dielectric spacer has a rounded upper surface, where a bottom most surface of the bottom metal layer is substantially flush with a bottom most surface of the first insulator layer. A method including forming a bottom metal layer on a substrate, forming a first contact window in the bottom metal layer, and forming a first dielectric spacer disposed within the first contact window on vertical sidewalls of the bottom metal layer, wherein the first dielectric spacer has a rounded upper surface.


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