Schlieren, Switzerland

Marco Bellini

USPTO Granted Patents = 9 

 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014-2025

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9 patents (USPTO):Explore Patents

Introduction

Marco Bellini, an innovative inventor based in Schlieren, Switzerland, holds an impressive portfolio of nine patents. His work primarily focuses on advancements in silicon carbide (SiC) technology, particularly in the field of transistor devices, making significant contributions to the electronics industry.

Latest Patents

Among his latest patents, Marco has developed a groundbreaking technology for a Planar SiC MOSFET with a retrograde implanted channel. This innovation features a silicon carbide semiconductor substrate, a SiC epitaxial layer, and a unique design of the gate structure that enhances the overall performance of the transistor device. Furthermore, he has patented a Silicon Carbide Transistor Device, which integrates a sophisticated source structure, planar gate structure, and a p-type channel region, showcasing his expertise in semiconductor technology.

Career Highlights

Marco Bellini has collaborated with renowned companies such as ABB Schweiz AG and ABB Power Grids Switzerland AG. His experience in these organizations highlights his pivotal role in the development of advanced semiconductor solutions that cater to various industrial applications.

Collaborations

Throughout his career, Marco has partnered with notable professionals, including Friedhelm Bauer and Umamaheswara Vemulapati. Their collective expertise has contributed to the success of multiple projects, fostering innovation and pushing the boundaries of technology in the field of silicon carbide devices.

Conclusion

Marco Bellini's contributions to semiconductor technology, particularly through his patented innovations, reflect his dedication to advancing electronic components. As a prominent inventor in Schlieren, Switzerland, his work continues to influence the industry and pave the way for future advancements in silicon carbide technology.

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