The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Nov. 06, 2020
Applicant:
Hitachi Energy Ltd, Zürich, CH;
Inventors:
Marco Bellini, Zürich, CH;
Jan Vobecky, Prague, CZ;
Lars Knoll, Hägglingen, CH;
Gianpaolo Romano, Baden, CH;
Giovanni Alfieri, Möriken, CH;
Assignee:
HITACHI ENERGY LTD, Zürich, CH;
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H10D 62/307 (2025.01); H10D 30/66 (2025.01); H10D 30/668 (2025.01);
Abstract
A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The channel region is of a second conductivity type different from the first conductivity type. The channel region comprises a first dopant having an activation energy of at most 0.15 eV, and a second dopant having an activation energy of at least 0.3 eV.