The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Dec. 16, 2019
Applicant:
Hitachi Energy Switzerland Ag, Baden, CH;
Inventors:
Assignee:
Hitachi Energy Switzerland AG, Baden, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract
A silicon carbide power device, e.g., a vertical power MOSFET or an IGBT, includes a silicon carbide wafer. A first stressor and a second stressor are arranged in the silicon carbide wafer at a first main side. A first channel region, a first portion of a drift layer and a second channel region are laterally arranged between the first stressor and the second stressor in a second lateral direction parallel to the first main side and perpendicular to the first lateral direction. A stress can be introduced by the first stressor and the second stressor in the first channel region and in the second channel region.