Lukas Kranz

Title: Innovations of Lukas Kranz

Introduction

Lukas Kranz is a notable inventor based in Zurich, Switzerland. He has made significant contributions to the field of power semiconductor devices, holding two patents that showcase his innovative approach to technology.

Latest Patents

His latest patents include the "Self-aligned field plate mesa FPM SiC Schottky barrier diode." This power semiconductor device features a wide-bandgap semiconductor layer with an active region and a termination region that surrounds it. The design incorporates a first recess in the termination region and a second recess in the active region, both filled with insulating material. The field plate on the semiconductor layer exposes a portion of the layer in the termination region. Another patent is for a "Silicon carbide power device with MOS structure and stressor." This device includes a silicon carbide wafer with stressors arranged to introduce stress in the channel regions, enhancing the device's performance.

Career Highlights

Lukas has worked with prominent companies such as Hitachi Energy Ltd and Hitachi Energy Switzerland AG. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

He has collaborated with notable professionals in the field, including Lars Knoll and Andrei Mihaila. These partnerships have contributed to his innovative projects and advancements in technology.

Conclusion

Lukas Kranz is a distinguished inventor whose work in power semiconductor devices has made a significant impact in the industry. His patents reflect his commitment to innovation and excellence in technology.