The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Nov. 04, 2020
Applicant:
Hitachi Energy Ltd, Zürich, CH;
Inventors:
Assignee:
HITACHI ENERGY LTD, Zürich, CH;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 30/0297 (2025.01); H10D 62/154 (2025.01); H10D 62/158 (2025.01); H10D 62/393 (2025.01); H10D 64/513 (2025.01);
Abstract
In one embodiment, the power field-effect transistor () comprises:
Wirths, Stephan. (2026). Power field-effect transistor and manufacturing method (U.S. Patent No. 12593466). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12593466
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile