The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

May. 23, 2019
Applicant:

Abb Schweiz Ag, Baden, CH;

Inventors:

Friedhelm Bauer, Semione, CH;

Umamaheswara Vemulapati, Windisch, CH;

Marco Bellini, Schlieren, CH;

Assignee:

ABB Schweiz, Baden, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 29/0619 (2013.01); H01L 29/868 (2013.01);
Abstract

In a power semiconductor device of the application a total number n of floating field rings (_to_) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation dbetween an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (_to_) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: d=d+ΣΔfor i=2 to n, wherein dis a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δ−0.05·Δ<Δ<Δ+0.05·Δfor j=1 to I−2, 2·Δ<|Δ|<10·Δ. for j=I−1, 0.95·Δ<Δ<1.05·Δfor j=I to n−1, Δ>0.1 μm, and −Δ/2<Δ<Δ/2, wherein I is an integer, for which 3≤l≤n/2.


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